JPS648727U - - Google Patents
Info
- Publication number
- JPS648727U JPS648727U JP10409187U JP10409187U JPS648727U JP S648727 U JPS648727 U JP S648727U JP 10409187 U JP10409187 U JP 10409187U JP 10409187 U JP10409187 U JP 10409187U JP S648727 U JPS648727 U JP S648727U
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- susceptor
- gas
- semiconductor substrate
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 2
- 238000007664 blowing Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10409187U JPS648727U (en]) | 1987-07-07 | 1987-07-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10409187U JPS648727U (en]) | 1987-07-07 | 1987-07-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS648727U true JPS648727U (en]) | 1989-01-18 |
Family
ID=31335503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10409187U Pending JPS648727U (en]) | 1987-07-07 | 1987-07-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS648727U (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8878244B2 (en) | 2002-05-31 | 2014-11-04 | Renesas Electronics Corporation | Semiconductor device having strained silicon film |
-
1987
- 1987-07-07 JP JP10409187U patent/JPS648727U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8878244B2 (en) | 2002-05-31 | 2014-11-04 | Renesas Electronics Corporation | Semiconductor device having strained silicon film |
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